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SQV120N10-3M8_GE3 Vishay MOSFET N-CH 100V 120A TO262-3
SQV120N10-3M8_GE3 Images
SQV120N10-3M8_GE3 Images
  • Manufacturer: Vishay
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: -
  • Description: MOSFET N-CH 100V 120A TO262-3
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Download Datasheet (PDF)
SQV120N10-3M8_GE3 Datasheet
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SQV120N10-3M8_GE3 Specifications:
  • MfrPart.: SQV120N10-3M8_GE3
  • Mfr: Vishay Siliconix
  • Description: MOSFET N-CH 100V 120A TO262-3
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tube
  • Series: Automotive, AEC-Q101, TrenchFET®
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 100 V
  • Current-ContinuousDrain(Id)@25°C: 120A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 3.8mOhm @ 20A, 10V
  • Vgs(th)(Max)@Id: 3.5V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 190 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 7230 pF @ 25 V
  • FETFeature: -
  • PowerDissipation(Max): 250W (Tc)
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: -
  • SQV120N10-3M8_GE3 Vishay, MOSFET N-CH 100V 120A TO262-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQV120N10-3M8_GE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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