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SQS966ENW-T1_GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays Package/Case: PowerPAK® 1212-8W Dual
- Description: MOSFET N-CHAN 60V
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SQS966ENW-T1_GE3 Specifications:
- MfrPart.: SQS966ENW-T1_GE3
- Mfr: Vishay Siliconix
- Description: MOSFET N-CHAN 60V
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: Automotive, AEC-Q101, TrenchFET®
- PartStatus: Active
- FETType: 2 N-Channel (Dual)
- FETFeature: Standard
- DraintoSourceVoltage(Vdss): 60V
- Current-ContinuousDrain(Id)@25°C: 6A (Tc)
- RdsOn(Max)@IdVgs: 36mOhm @ 1.25A, 10V
- Vgs(th)(Max)@Id: 2.5V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 8.8nC @ 10V
- InputCapacitance(Ciss)(Max)@Vds: 572pF @ 25V
- Power-Max: 27.8W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Surface Mount, Wettable Flank
- Package/Case: PowerPAK® 1212-8W Dual
- SQS966ENW-T1_GE3 Vishay, MOSFET N-CHAN 60V, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
SQS966ENW-T1_GE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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