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SQM120P10_10M1LGE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: TO-263 (D²Pak)
- Description: MOSFET P-CH 100V 120A TO263
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SQM120P10_10M1LGE3 Specifications:
- MfrPart.: SQM120P10_10M1LGE3
- Mfr: Vishay Siliconix
- Description: MOSFET P-CH 100V 120A TO263
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: Automotive, AEC-Q101, TrenchFET®
- PartStatus: Active
- FETType: P-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 100 V
- Current-ContinuousDrain(Id)@25°C: 120A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
- RdsOn(Max)@IdVgs: 10.1mOhm @ 30A, 10V
- Vgs(th)(Max)@Id: 2.5V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 190 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 9000 pF @ 25 V
- FETFeature: -
- PowerDissipation(Max): 375W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: TO-263 (D²Pak)
- SQM120P10_10M1LGE3 Vishay, MOSFET P-CH 100V 120A TO263, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQM120P10_10M1LGE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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