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SISS80DN-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PowerPAK® 1212-8S
- Description: MOSFET N-CH 20V 58.3A/210A PPAK
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SISS80DN-T1-GE3 Specifications:
- MfrPart.: SISS80DN-T1-GE3
- Mfr: Vishay Siliconix
- Description: MOSFET N-CH 20V 58.3A/210A PPAK
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET® Gen IV
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 20 V
- Current-ContinuousDrain(Id)@25°C: 58.3A (Ta), 210A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 10V
- RdsOn(Max)@IdVgs: 0.92mOhm @ 10A, 10V
- Vgs(th)(Max)@Id: 1.5V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 122 nC @ 10 V
- Vgs(Max): +12V, -8V
- InputCapacitance(Ciss)(Max)@Vds: 6450 pF @ 10 V
- FETFeature: -
- PowerDissipation(Max): 5W (Ta), 65W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PowerPAK® 1212-8S
- SISS80DN-T1-GE3 Vishay, MOSFET N-CH 20V 58.3A/210A PPAK, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISS80DN-T1-GE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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