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SISS70DN-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PowerPAK® 1212-8S
- Description: MOSFET N-CH 125V 8.5A/31A PPAK
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SISS70DN-T1-GE3 Specifications:
- MfrPart.: SISS70DN-T1-GE3
- Mfr: Vishay Siliconix
- Description: MOSFET N-CH 125V 8.5A/31A PPAK
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET®
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 125 V
- Current-ContinuousDrain(Id)@25°C: 8.5A (Ta), 31A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 29.8mOhm @ 8.5A, 10V
- Vgs(th)(Max)@Id: 4.5V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 15.3 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 535 pF @ 62.5 V
- FETFeature: -
- PowerDissipation(Max): 5.1W (Ta), 65.8W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PowerPAK® 1212-8S
- SISS70DN-T1-GE3 Vishay, MOSFET N-CH 125V 8.5A/31A PPAK, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISS70DN-T1-GE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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