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SISS26LDN-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PowerPAK® 1212-8S
- Description: MOSFET N-CH 60V 23.7A/81.2A PPAK
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SISS26LDN-T1-GE3 Specifications:
- MfrPart.: SISS26LDN-T1-GE3
- Mfr: Vishay Siliconix
- Description: MOSFET N-CH 60V 23.7A/81.2A PPAK
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET® Gen IV
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 60 V
- Current-ContinuousDrain(Id)@25°C: 23.7A (Ta), 81.2A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
- RdsOn(Max)@IdVgs: 4.3mOhm @ 15A, 10V
- Vgs(th)(Max)@Id: 2.5V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 48 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 1980 pF @ 30 V
- FETFeature: -
- PowerDissipation(Max): 4.8W (Ta), 57W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PowerPAK® 1212-8S
- SISS26LDN-T1-GE3 Vishay, MOSFET N-CH 60V 23.7A/81.2A PPAK, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISS26LDN-T1-GE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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