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SISH129DN-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PowerPAK® 1212-8SH
- Description: MOSFET P-CH 30V 14.4A/35A PPAK
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SISH129DN-T1-GE3 Specifications:
- MfrPart.: SISH129DN-T1-GE3
- Mfr: Vishay Siliconix
- Description: MOSFET P-CH 30V 14.4A/35A PPAK
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET®
- PartStatus: Active
- FETType: P-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 30 V
- Current-ContinuousDrain(Id)@25°C: 14.4A (Ta), 35A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
- RdsOn(Max)@IdVgs: 11.4mOhm @ 14.4A, 10V
- Vgs(th)(Max)@Id: 2.8V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 71 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 3345 pF @ 15 V
- FETFeature: -
- PowerDissipation(Max): 3.8W (Ta), 52.1W (Tc)
- OperatingTemperature: -50°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PowerPAK® 1212-8SH
- SISH129DN-T1-GE3 Vishay, MOSFET P-CH 30V 14.4A/35A PPAK, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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