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SISH108DN-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PowerPAK® 1212-8SH
- Description: MOSFET N-CH 20V 14A PPAK1212-8SH
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SISH108DN-T1-GE3 Specifications:
- MfrPart.: SISH108DN-T1-GE3
- Mfr: Vishay Siliconix
- Description: MOSFET N-CH 20V 14A PPAK1212-8SH
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET® Gen II
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 20 V
- Current-ContinuousDrain(Id)@25°C: 14A (Ta)
- DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
- RdsOn(Max)@IdVgs: 4.9mOhm @ 22A, 10V
- Vgs(th)(Max)@Id: 2V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 30 nC @ 4.5 V
- Vgs(Max): ±16V
- InputCapacitance(Ciss)(Max)@Vds: -
- FETFeature: -
- PowerDissipation(Max): 1.5W (Ta)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PowerPAK® 1212-8SH
- SISH108DN-T1-GE3 Vishay, MOSFET N-CH 20V 14A PPAK1212-8SH, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISH108DN-T1-GE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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