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SISC06DN-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PowerPAK® 1212-8
- Description: MOSFET N-CH 30V 27.6A/40A PPAK
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SISC06DN-T1-GE3 Specifications:
- MfrPart.: SISC06DN-T1-GE3
- Mfr: Vishay Siliconix
- Description: MOSFET N-CH 30V 27.6A/40A PPAK
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET® Gen IV
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 30 V
- Current-ContinuousDrain(Id)@25°C: 27.6A (Ta), 40A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
- RdsOn(Max)@IdVgs: 2.7mOhm @ 15A, 10V
- Vgs(th)(Max)@Id: 2.1V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 58 nC @ 10 V
- Vgs(Max): +20V, -16V
- InputCapacitance(Ciss)(Max)@Vds: 2455 pF @ 15 V
- FETFeature: -
- PowerDissipation(Max): 3.7W (Ta), 46.3W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PowerPAK® 1212-8
- SISC06DN-T1-GE3 Vishay, MOSFET N-CH 30V 27.6A/40A PPAK, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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