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SIS176LDN-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PowerPAK® 1212-8
- Description: N-CHANNEL 70 V (D-S) MOSFET POWE
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SIS176LDN-T1-GE3 Specifications:
- MfrPart.: SIS176LDN-T1-GE3
- Mfr: Vishay Siliconix
- Description: N-CHANNEL 70 V (D-S) MOSFET POWE
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET® Gen IV
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 70 V
- Current-ContinuousDrain(Id)@25°C: 12.9A (Ta), 42.3A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 3.3V, 4.5V
- RdsOn(Max)@IdVgs: 10.9mOhm @ 10A, 4.5V
- Vgs(th)(Max)@Id: 1.6V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 19 nC @ 4.5 V
- Vgs(Max): ±12V
- InputCapacitance(Ciss)(Max)@Vds: 1660 pF @ 35 V
- FETFeature: -
- PowerDissipation(Max): 3.6W (Ta), 39W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PowerPAK® 1212-8
- SIS176LDN-T1-GE3 Vishay, N-CHANNEL 70 V (D-S) MOSFET POWE, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIS176LDN-T1-GE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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