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SIR681DP-T1-RE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PowerPAK® SO-8
- Description: MOSFET P-CH 80V 17.6A/71.9A PPAK
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SIR681DP-T1-RE3 Specifications:
- MfrPart.: SIR681DP-T1-RE3
- Mfr: Vishay Siliconix
- Description: MOSFET P-CH 80V 17.6A/71.9A PPAK
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET® Gen IV
- PartStatus: Active
- FETType: P-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 80 V
- Current-ContinuousDrain(Id)@25°C: 17.6A (Ta), 71.9A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): -
- RdsOn(Max)@IdVgs: 11.2mOhm @ 10A, 10V
- Vgs(th)(Max)@Id: 2.6V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 105 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 4850 pF @ 40 V
- FETFeature: -
- PowerDissipation(Max): 6.25W (Ta), 104W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PowerPAK® SO-8
- SIR681DP-T1-RE3 Vishay, MOSFET P-CH 80V 17.6A/71.9A PPAK, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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