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SIR606BDP-T1-RE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PowerPAK® SO-8
- Description: MOSFET N-CH 100V 10.9A PPAK
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SIR606BDP-T1-RE3 Specifications:
- MfrPart.: SIR606BDP-T1-RE3
- Mfr: Vishay Siliconix
- Description: MOSFET N-CH 100V 10.9A PPAK
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET® Gen IV
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 100 V
- Current-ContinuousDrain(Id)@25°C: 10.9A (Ta), 38.7A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 7.5V, 10V
- RdsOn(Max)@IdVgs: 17.4mOhm @ 10A, 10V
- Vgs(th)(Max)@Id: 4V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 30 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 1470 pF @ 50 V
- FETFeature: -
- PowerDissipation(Max): 5W (Ta), 62.5W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PowerPAK® SO-8
- SIR606BDP-T1-RE3 Vishay, MOSFET N-CH 100V 10.9A PPAK, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR606BDP-T1-RE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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