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SIR5802DP-T1-RE3 Vishay N-CHANNEL 80 V (D-S) MOSFET POWE
SIR5802DP-T1-RE3 Images
SIR5802DP-T1-RE3 Images
  • Manufacturer: Vishay
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PowerPAK® SO-8
  • Description: N-CHANNEL 80 V (D-S) MOSFET POWE
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SIR5802DP-T1-RE3 Datasheet
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SIR5802DP-T1-RE3 Specifications:
  • MfrPart.: SIR5802DP-T1-RE3
  • Mfr: Vishay Siliconix
  • Description: N-CHANNEL 80 V (D-S) MOSFET POWE
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: TrenchFET® Gen V
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 80 V
  • Current-ContinuousDrain(Id)@25°C: 33.6A (Ta), 137.5A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 7.5V, 10V
  • RdsOn(Max)@IdVgs: 2.9mOhm @ 20A, 10V
  • Vgs(th)(Max)@Id: 4V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 60 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 3020 pF @ 40 V
  • FETFeature: -
  • PowerDissipation(Max): 6.25W (Ta), 104W (Tc)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PowerPAK® SO-8
  • SIR5802DP-T1-RE3 Vishay, N-CHANNEL 80 V (D-S) MOSFET POWE, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR5802DP-T1-RE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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