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SIR182LDP-T1-RE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PowerPAK® SO-8
- Description: N-CHANNEL 60-V (D-S) MOSFET POWE
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SIR182LDP-T1-RE3 Specifications:
- MfrPart.: SIR182LDP-T1-RE3
- Mfr: Vishay Siliconix
- Description: N-CHANNEL 60-V (D-S) MOSFET POWE
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET® Gen IV
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 60 V
- Current-ContinuousDrain(Id)@25°C: 31.7A (Ta), 130A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
- RdsOn(Max)@IdVgs: 2.75mOhm @ 15A, 10V
- Vgs(th)(Max)@Id: 2.4V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 84 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 3700 pF @ 30 V
- FETFeature: -
- PowerDissipation(Max): 5W (Ta), 83W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PowerPAK® SO-8
- SIR182LDP-T1-RE3 Vishay, N-CHANNEL 60-V (D-S) MOSFET POWE, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR182LDP-T1-RE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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