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SIHB11N80E-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: D²PAK (TO-263)
- Description: MOSFET N-CH 800V 12A D2PAK
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SIHB11N80E-GE3 Specifications:
- MfrPart.: SIHB11N80E-GE3
- Mfr: Vishay Siliconix
- Description: MOSFET N-CH 800V 12A D2PAK
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: E
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 800 V
- Current-ContinuousDrain(Id)@25°C: 12A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 440mOhm @ 5.5A, 10V
- Vgs(th)(Max)@Id: 4V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 88 nC @ 10 V
- Vgs(Max): ±30V
- InputCapacitance(Ciss)(Max)@Vds: 1670 pF @ 100 V
- FETFeature: -
- PowerDissipation(Max): 179W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: D²PAK (TO-263)
- SIHB11N80E-GE3 Vishay, MOSFET N-CH 800V 12A D2PAK, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIHB11N80E-GE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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