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SIA817EDJ-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PowerPAK® SC-70-6 Dual
- Description: MOSFET P-CH 30V 4.5A PPAK SC70-6
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SIA817EDJ-T1-GE3 Specifications:
- MfrPart.: SIA817EDJ-T1-GE3
- Mfr: Vishay Siliconix
- Description: MOSFET P-CH 30V 4.5A PPAK SC70-6
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: LITTLE FOOT®
- PartStatus: Active
- FETType: P-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 30 V
- Current-ContinuousDrain(Id)@25°C: 4.5A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 10V
- RdsOn(Max)@IdVgs: 65mOhm @ 3A, 10V
- Vgs(th)(Max)@Id: 1.3V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 23 nC @ 10 V
- Vgs(Max): ±12V
- InputCapacitance(Ciss)(Max)@Vds: 600 pF @ 15 V
- FETFeature: Schottky Diode (Isolated)
- PowerDissipation(Max): 1.9W (Ta), 6.5W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PowerPAK® SC-70-6 Dual
- SIA817EDJ-T1-GE3 Vishay, MOSFET P-CH 30V 4.5A PPAK SC70-6, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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