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SIA438EDJ-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PowerPAK® SC-70-6
- Description: MOSFET N-CH 20V 6A PPAK SC70-6
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SIA438EDJ-T1-GE3 Specifications:
- MfrPart.: SIA438EDJ-T1-GE3
- Mfr: Vishay Siliconix
- Description: MOSFET N-CH 20V 6A PPAK SC70-6
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR)
- Series: TrenchFET®
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 20 V
- Current-ContinuousDrain(Id)@25°C: 6A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 4.5V
- RdsOn(Max)@IdVgs: 46mOhm @ 3.9A, 4.5V
- Vgs(th)(Max)@Id: 1.4V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 12 nC @ 10 V
- Vgs(Max): ±12V
- InputCapacitance(Ciss)(Max)@Vds: 350 pF @ 10 V
- FETFeature: -
- PowerDissipation(Max): 2.4W (Ta), 11.4W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PowerPAK® SC-70-6
- SIA438EDJ-T1-GE3 Vishay, MOSFET N-CH 20V 6A PPAK SC70-6, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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