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SIA418DJ-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PowerPAK® SC-70-6
- Description: MOSFET N-CH 30V 12A PPAK SC70-6
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SIA418DJ-T1-GE3 Specifications:
- MfrPart.: SIA418DJ-T1-GE3
- Mfr: Vishay Siliconix
- Description: MOSFET N-CH 30V 12A PPAK SC70-6
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT),Bulk
- Series: TrenchFET®
- PartStatus: Obsolete
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 30 V
- Current-ContinuousDrain(Id)@25°C: 12A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
- RdsOn(Max)@IdVgs: 18mOhm @ 9A, 10V
- Vgs(th)(Max)@Id: 2.4V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 17 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 570 pF @ 15 V
- FETFeature: -
- PowerDissipation(Max): 3.5W (Ta), 19W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PowerPAK® SC-70-6
- SIA418DJ-T1-GE3 Vishay, MOSFET N-CH 30V 12A PPAK SC70-6, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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