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SIA413ADJ-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PowerPAK® SC-70-6 Single
- Description: MOSFET P-CH 12V 12A PPAK SC70-6
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SIA413ADJ-T1-GE3 Specifications:
- MfrPart.: SIA413ADJ-T1-GE3
- Mfr: Vishay Siliconix
- Description: MOSFET P-CH 12V 12A PPAK SC70-6
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET®
- PartStatus: Active
- FETType: P-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 12 V
- Current-ContinuousDrain(Id)@25°C: 12A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 1.5V, 4.5V
- RdsOn(Max)@IdVgs: 29mOhm @ 6.7A, 4.5V
- Vgs(th)(Max)@Id: 1V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 57 nC @ 8 V
- Vgs(Max): ±8V
- InputCapacitance(Ciss)(Max)@Vds: 1800 pF @ 10 V
- FETFeature: -
- PowerDissipation(Max): 19W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PowerPAK® SC-70-6 Single
- SIA413ADJ-T1-GE3 Vishay, MOSFET P-CH 12V 12A PPAK SC70-6, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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