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SI8812DB-T2-E1 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: 4-Microfoot
- Description: MOSFET N-CH 20V 4MICROFOOT
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SI8812DB-T2-E1 Specifications:
- MfrPart.: SI8812DB-T2-E1
- Mfr: Vishay Siliconix
- Description: MOSFET N-CH 20V 4MICROFOOT
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET®
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 20 V
- Current-ContinuousDrain(Id)@25°C: 2.3A (Ta)
- DriveVoltage(MaxRdsOnMinRdsOn): 1.2V, 4.5V
- RdsOn(Max)@IdVgs: 59mOhm @ 1A, 4.5V
- Vgs(th)(Max)@Id: 1V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 17 nC @ 8 V
- Vgs(Max): ±5V
- InputCapacitance(Ciss)(Max)@Vds: -
- FETFeature: -
- PowerDissipation(Max): 500mW (Ta)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: 4-Microfoot
- SI8812DB-T2-E1 Vishay, MOSFET N-CH 20V 4MICROFOOT, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI8812DB-T2-E1, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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