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SI8425DB-T1-E1 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: 4-WLCSP (1.6x1.6)
- Description: MOSFET P-CH 20V 4WLCSP
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SI8425DB-T1-E1 Specifications:
- MfrPart.: SI8425DB-T1-E1
- Mfr: Vishay Siliconix
- Description: MOSFET P-CH 20V 4WLCSP
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET®
- PartStatus: Active
- FETType: P-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 20 V
- Current-ContinuousDrain(Id)@25°C: 5.9A (Ta)
- DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5V
- RdsOn(Max)@IdVgs: 23mOhm @ 2A, 4.5V
- Vgs(th)(Max)@Id: 900mV @ 250µA
- GateCharge(Qg)(Max)@Vgs: 110 nC @ 10 V
- Vgs(Max): ±10V
- InputCapacitance(Ciss)(Max)@Vds: 2800 pF @ 10 V
- FETFeature: -
- PowerDissipation(Max): 1.1W (Ta), 2.7W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: 4-WLCSP (1.6x1.6)
- SI8425DB-T1-E1 Vishay, MOSFET P-CH 20V 4WLCSP, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI8425DB-T1-E1, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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