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SI7956DP-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays Package/Case: PowerPAK® SO-8 Dual
- Description: MOSFET 2N-CH 150V 2.6A PPAK SO-8
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SI7956DP-T1-GE3 Specifications:
- MfrPart.: SI7956DP-T1-GE3
- Mfr: Vishay Siliconix
- Description: MOSFET 2N-CH 150V 2.6A PPAK SO-8
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET®
- PartStatus: Active
- FETType: 2 N-Channel (Dual)
- FETFeature: Logic Level Gate
- DraintoSourceVoltage(Vdss): 150V
- Current-ContinuousDrain(Id)@25°C: 2.6A
- RdsOn(Max)@IdVgs: 105mOhm @ 4.1A, 10V
- Vgs(th)(Max)@Id: 4V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 26nC @ 10V
- InputCapacitance(Ciss)(Max)@Vds: -
- Power-Max: 1.4W
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- Package/Case: PowerPAK® SO-8 Dual
- SI7956DP-T1-GE3 Vishay, MOSFET 2N-CH 150V 2.6A PPAK SO-8, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
SI7956DP-T1-GE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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