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SI5509DC-T1-E3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays Package/Case: 8-SMD, Flat Lead
- Description: MOSFET N/P-CH 20V 6.1A 1206-8
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SI5509DC-T1-E3 Specifications:
- MfrPart.: SI5509DC-T1-E3
- Mfr: Vishay Siliconix
- Description: MOSFET N/P-CH 20V 6.1A 1206-8
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET®
- PartStatus: Obsolete
- FETType: N and P-Channel
- FETFeature: Logic Level Gate
- DraintoSourceVoltage(Vdss): 20V
- Current-ContinuousDrain(Id)@25°C: 6.1A, 4.8A
- RdsOn(Max)@IdVgs: 52mOhm @ 5A, 4.5V
- Vgs(th)(Max)@Id: 2V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 6.6nC @ 5V
- InputCapacitance(Ciss)(Max)@Vds: 455pF @ 10V
- Power-Max: 4.5W
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- Package/Case: 8-SMD, Flat Lead
- SI5509DC-T1-E3 Vishay, MOSFET N/P-CH 20V 6.1A 1206-8, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
SI5509DC-T1-E3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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