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SI4900DY-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays Package/Case: 8-SOIC (0.154, 3.90mm Width)
- Description: MOSFET 2N-CH 60V 5.3A 8-SOIC
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SI4900DY-T1-GE3 Specifications:
- MfrPart.: SI4900DY-T1-GE3
- Mfr: Vishay Siliconix
- Description: MOSFET 2N-CH 60V 5.3A 8-SOIC
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET®
- PartStatus: Active
- FETType: 2 N-Channel (Dual)
- FETFeature: Logic Level Gate
- DraintoSourceVoltage(Vdss): 60V
- Current-ContinuousDrain(Id)@25°C: 5.3A
- RdsOn(Max)@IdVgs: 58mOhm @ 4.3A, 10V
- Vgs(th)(Max)@Id: 3V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 20nC @ 10V
- InputCapacitance(Ciss)(Max)@Vds: 665pF @ 15V
- Power-Max: 3.1W
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- Package/Case: 8-SOIC (0.154, 3.90mm Width)
- SI4900DY-T1-GE3 Vishay, MOSFET 2N-CH 60V 5.3A 8-SOIC, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
SI4900DY-T1-GE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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