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SI2392DS-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: SOT-23
- Description: MOSFET N-CH 100V 3.1A SOT-23
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SI2392DS-T1-GE3 Specifications:
- MfrPart.: SI2392DS-T1-GE3
- Mfr: Vishay Siliconix
- Description: MOSFET N-CH 100V 3.1A SOT-23
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET®
- PartStatus: Obsolete
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 100 V
- Current-ContinuousDrain(Id)@25°C: 3.1A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
- RdsOn(Max)@IdVgs: 126mOhm @ 2A, 10V
- Vgs(th)(Max)@Id: 3V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 10.4 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 196 pF @ 50 V
- FETFeature: -
- PowerDissipation(Max): 1.25W (Ta), 2.5W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: SOT-23
- SI2392DS-T1-GE3 Vishay, MOSFET N-CH 100V 3.1A SOT-23, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2392DS-T1-GE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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