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SI2387DS-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: SOT-23-3 (TO-236)
- Description: P-CHANNEL -80V SOT-23, 164 M @ 1
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SI2387DS-T1-GE3 Specifications:
- MfrPart.: SI2387DS-T1-GE3
- Mfr: Vishay Siliconix
- Description: P-CHANNEL -80V SOT-23, 164 M @ 1
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET® Gen IV
- PartStatus: Active
- FETType: P-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 80 V
- Current-ContinuousDrain(Id)@25°C: 2.1A (Ta), 3A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
- RdsOn(Max)@IdVgs: 164mOhm @ 2.1A, 10V
- Vgs(th)(Max)@Id: 2.5V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 10.2 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 395 pF @ 40 V
- FETFeature: -
- PowerDissipation(Max): 1.3W (Ta), 2.5W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: SOT-23-3 (TO-236)
- SI2387DS-T1-GE3 Vishay, P-CHANNEL -80V SOT-23, 164 M @ 1, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2387DS-T1-GE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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