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SI2365EDS-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: SOT-23-3 (TO-236)
- Description: MOSFET P-CH 20V 5.9A TO236
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SI2365EDS-T1-GE3 Specifications:
- MfrPart.: SI2365EDS-T1-GE3
- Mfr: Vishay Siliconix
- Description: MOSFET P-CH 20V 5.9A TO236
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET®
- PartStatus: Active
- FETType: P-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 20 V
- Current-ContinuousDrain(Id)@25°C: 5.9A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5V
- RdsOn(Max)@IdVgs: 32mOhm @ 4A, 4.5V
- Vgs(th)(Max)@Id: 1V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 36 nC @ 8 V
- Vgs(Max): ±8V
- InputCapacitance(Ciss)(Max)@Vds: -
- FETFeature: -
- PowerDissipation(Max): 1W (Ta), 1.7W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: SOT-23-3 (TO-236)
- SI2365EDS-T1-GE3 Vishay, MOSFET P-CH 20V 5.9A TO236, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2365EDS-T1-GE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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