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SI2337DS-T1-E3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: SOT-23-3 (TO-236)
- Description: MOSFET P-CH 80V 2.2A SOT23-3
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SI2337DS-T1-E3 Specifications:
- MfrPart.: SI2337DS-T1-E3
- Mfr: Vishay Siliconix
- Description: MOSFET P-CH 80V 2.2A SOT23-3
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET®
- PartStatus: Active
- FETType: P-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 80 V
- Current-ContinuousDrain(Id)@25°C: 2.2A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10V
- RdsOn(Max)@IdVgs: 270mOhm @ 1.2A, 10V
- Vgs(th)(Max)@Id: 4V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 17 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 500 pF @ 40 V
- FETFeature: -
- PowerDissipation(Max): 760mW (Ta), 2.5W (Tc)
- OperatingTemperature: -50°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: SOT-23-3 (TO-236)
- SI2337DS-T1-E3 Vishay, MOSFET P-CH 80V 2.2A SOT23-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2337DS-T1-E3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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