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SI2329DS-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: SOT-23-3 (TO-236)
- Description: MOSFET P-CH 8V 6A SOT23-3
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SI2329DS-T1-GE3 Specifications:
- MfrPart.: SI2329DS-T1-GE3
- Mfr: Vishay Siliconix
- Description: MOSFET P-CH 8V 6A SOT23-3
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET®
- PartStatus: Active
- FETType: P-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 8 V
- Current-ContinuousDrain(Id)@25°C: 6A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 1.2V, 4.5V
- RdsOn(Max)@IdVgs: 30mOhm @ 5.3A, 4.5V
- Vgs(th)(Max)@Id: 800mV @ 250µA
- GateCharge(Qg)(Max)@Vgs: 29 nC @ 4.5 V
- Vgs(Max): ±5V
- InputCapacitance(Ciss)(Max)@Vds: 1485 pF @ 4 V
- FETFeature: -
- PowerDissipation(Max): 2.5W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: SOT-23-3 (TO-236)
- SI2329DS-T1-GE3 Vishay, MOSFET P-CH 8V 6A SOT23-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2329DS-T1-GE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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