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SI2321DS-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: SOT-23-3 (TO-236)
- Description: MOSFET P-CH 20V 2.9A SOT23-3
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SI2321DS-T1-GE3 Specifications:
- MfrPart.: SI2321DS-T1-GE3
- Mfr: Vishay Siliconix
- Description: MOSFET P-CH 20V 2.9A SOT23-3
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR)
- Series: TrenchFET®
- PartStatus: Obsolete
- FETType: P-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 20 V
- Current-ContinuousDrain(Id)@25°C: 2.9A (Ta)
- DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5V
- RdsOn(Max)@IdVgs: 57mOhm @ 3.3A, 4.5V
- Vgs(th)(Max)@Id: 900mV @ 250µA
- GateCharge(Qg)(Max)@Vgs: 13 nC @ 4.5 V
- Vgs(Max): ±8V
- InputCapacitance(Ciss)(Max)@Vds: 715 pF @ 6 V
- FETFeature: -
- PowerDissipation(Max): 710mW (Ta)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: SOT-23-3 (TO-236)
- SI2321DS-T1-GE3 Vishay, MOSFET P-CH 20V 2.9A SOT23-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2321DS-T1-GE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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