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SI2312BDS-T1-GE3 Vishay MOSFET N-CH 20V 3.9A SOT23-3
SI2312BDS-T1-GE3 Images
SI2312BDS-T1-GE3 Images
  • Manufacturer: Vishay
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: SOT-23-3 (TO-236)
  • Description: MOSFET N-CH 20V 3.9A SOT23-3
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Download Datasheet (PDF)
SI2312BDS-T1-GE3 Datasheet
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SI2312BDS-T1-GE3 Specifications:
  • MfrPart.: SI2312BDS-T1-GE3
  • Mfr: Vishay Siliconix
  • Description: MOSFET N-CH 20V 3.9A SOT23-3
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: TrenchFET®
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 20 V
  • Current-ContinuousDrain(Id)@25°C: 3.9A (Ta)
  • DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5V
  • RdsOn(Max)@IdVgs: 31mOhm @ 5A, 4.5V
  • Vgs(th)(Max)@Id: 850mV @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 12 nC @ 4.5 V
  • Vgs(Max): ±8V
  • InputCapacitance(Ciss)(Max)@Vds: -
  • FETFeature: -
  • PowerDissipation(Max): 750mW (Ta)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: SOT-23-3 (TO-236)
  • SI2312BDS-T1-GE3 Vishay, MOSFET N-CH 20V 3.9A SOT23-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2312BDS-T1-GE3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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