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SI2309DS-T1-E3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: SOT-23-3 (TO-236)
- Description: MOSFET P-CH 60V 1.25A SOT23-3
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SI2309DS-T1-E3 Specifications:
- MfrPart.: SI2309DS-T1-E3
- Mfr: Vishay Siliconix
- Description: MOSFET P-CH 60V 1.25A SOT23-3
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET®
- PartStatus: Obsolete
- FETType: P-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 60 V
- Current-ContinuousDrain(Id)@25°C: 1.25A (Ta)
- DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
- RdsOn(Max)@IdVgs: 340mOhm @ 1.25A, 10V
- Vgs(th)(Max)@Id: 1V @ 250µA (Min)
- GateCharge(Qg)(Max)@Vgs: 12 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: -
- FETFeature: -
- PowerDissipation(Max): 1.25W (Ta)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: SOT-23-3 (TO-236)
- SI2309DS-T1-E3 Vishay, MOSFET P-CH 60V 1.25A SOT23-3, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2309DS-T1-E3, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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